| PART |
Description |
Maker |
| CY7C1049CV33-12ZSXA CY7C1049CV33-12ZSXAT CY7C1049C |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62148ESL-55ZAXAT CY62148ESL-55ZAXI CY62148ESL-55 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62157E |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62148EV30LL-45BVI CY62148EV30LL-45BVIT CY62148EV |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL® 32-Mbit (2M x 16) Static RAM
MoBL® 16-Mbit (1M x 16) Static RAM
＂SHIELDING BAG 16 X 18＂＂ Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”，“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
| CY62157EV30LL-45ZSXA CY62157EV30LL-55ZXE CY62157EV |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY7C1049CV33-8ZSXC CY7C1049CV33-10ZXI |
4-Mbit (512 K × 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY62138EV30 CY62138EV30LL-45BVXI CY62138EV3009 |
2-Mbit (256K x 8) MoBL Static RAM
2-Mbit (256K x 8) MoBL庐 Static RAM
2-Mbit (256K x 8) MoBL? Static RAM
2-Mbit (256K x 8) MoBL㈢ Static RAM
|
Cypress Semiconductor
|
| XVB-C5B4 XVB-C4B4 XVB-L4B4 XVB-C38 XVB-L4B5 XVB-C2 |
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture
4-Mbit (512K x 8) MoBL® Static RAM
MoBL® 2-Mbit (128K x 16) Static RAM
TetraHub™ High-Speed USB Hub Controller
CY7C602xx Wireless; Memory Size: 8K; RAM: 256B; Vcc (V): 2.7-3.6V; Core: M8C; Code Memory Architecture: Flash; Development Kit: CY3655
镜头单元LED绿色24V
镜头单元闪烁的红
LENS UNIT LED ORANGE 24V 镜头组带领橙24V
SMD IC USB DRIVER
|
STMicroelectronics N.V.
|
| AM41DL3248GT45IS M41000002S M41000002L |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512亩x 16位），静态存储器
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512x 16位），静态存储器
|
Samsung Semiconductor Co., Ltd.
Advanced Micro Devices, Inc.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
